copyright ? 2002 semicoa semiconductors, inc. rev. f 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 2 www. semicoa .com 2n3866a silicon npn transisto r data sheet description semicoa semiconductors offers: ? screening and processing per mil-prf-19500 appendix e ? jan level (2n3866aj) ? jantx level (2n3866ajx) ? jantxv level (2n3866ajv) ? jans level (2n3866ajs) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 method 2072 for jantxv and jans ? radiation testing (total dose) upon request please contact semicoa for special configurations www. semicoa .com or (714) 979-1900 applications ? general purpose high frequency ? vhf-uhf amplifier transistor ? npn silicon transistor features ? hermetically sealed to-39 metal can ? also available in chip configuration ? chip geometry 1008 ? reference document: mil-prf-19500/398 benefits ? qualification levels: jan, jantx, jantxv and jans ? radiation testing available absolute maximum ratings t c = 25 c unless otherwise specified parameter symbol rating unit collector-emitter voltage v ceo 30 volts collector-base voltage v cbo 60 volts emitter-base voltage v ebo 3.5 volts collector current, continuous i c 400 ma power dissipation, t a = 25 c derate linearly above 25 c p t 1 5.71 w mw/ c power dissipation, t c = 25 c derate linearly above 25 c p t 2.9 16.6 w mw/ c thermal resistance r jc 60 c/w operating junction temperature storage temperature t j t stg -65 to +200 c
copyright ? 2002 semicoa semiconductors, inc. rev. f 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. semicoa .com 2n3866a silicon npn transisto r data sheet electrical characteristics characteristics specified at t a = 25 c off characteristics parameter symbol test conditions min typ max units collector-base breakdown voltage v (br)cbo i c = 100 a 60 volts collector-emitter breakdown voltage v (br)ceo i c = 5 ma 30 volts emitter-base breakdown voltage v (br)ebo i e = 100 a 3.5 volts collector-emitter cutoff current i ceo v ce = 28 volts 20 a collector-emitter cutoff current i ces1 i ces2 v ce = 55 volts v ce = 55 volts, t a = 150 c 100 2 a ma on characteristics pulse test: pulse width = 300 s, duty cycle 2.0% parameter symbol test conditions min typ max units dc current gain h fe1 h fe2 h fe3 i c = 50 ma, v ce = 5 volts i c = 360 ma, v ce = 5 volts i c = 50 ma, v ce = 5 volts t a = -55 c 25 8 12 200 collector-emitter saturation voltage v cesat1 i c = 100 ma, i b = 10 ma 1 volts dynamic characteristics parameter symbol test conditions min typ max units magnitude ? common emitter, short circuit forward curre nt transfer ratio |h fe | v ce = 15 volts, i c = 50 ma, f = 200 mhz 4 7.5 open circuit output capacitance c obo v cb = 28 volts, i e = 0 ma, 3.5 pf collector efficiency 1 2 v cc = 28 volts, f = 400 mhz p in = 0.15 w p in = 0.075 w 45 40 % power output p 1out p 1out v cc = 28 volts, f = 400 mhz p in = 0.15 w p in = 0.075 w 1.0 0.5 2 watts
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